Paper
20 October 2006 A fresh look at the cell-wise process effect corrections
Author Affiliations +
Abstract
With moving from one process node to another, process effect corrections are becoming a very challenging task. High quality models, long run times and extensively large computer resources are needed to perform a typical modern process effect correction procedure. Since the patterns that form IC layouts are highly repetitive, all the modern process correction algorithms try to take advantage of this fact to decrease processing time and computer resources requirements. However, currently used high accuracy process effect correction algorithms are becoming less and less advantageous because of the increasing relative non-locality of the process effects. In this paper, we investigate the feasibility of a simpler approach called "cell-wise corrections". We propose a recipe for the cell-wise process effect correction and analyze its accuracy using a 65 nm test layout. The recipe is fully automated and implemented using a commercially available OPC tool. The analysis reveals good accuracy and feasibility of our approach.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitri Lapanik "A fresh look at the cell-wise process effect corrections", Proc. SPIE 6349, Photomask Technology 2006, 63491R (20 October 2006); https://doi.org/10.1117/12.688731
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KEYWORDS
Scattering

Optical proximity correction

Error analysis

Algorithm development

Metals

Transistors

Design for manufacturing

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