Application challenges with double patterning technology (DPT) beyond 45 nm

Jungchul Park; Stephen Hsu; Douglas Van Den Broeke; J. Fung Chen; Mircea Dusa; Robert Socha; Jo Finders; Bert Vleeming; Anton van Oosten; Peter Nikolsky; Vincent Wiaux; Eric Hendrickx; Joost Bekaert; Geert Vandenberghe

doi:10.1117/12.692921

20 October 2006 Application challenges with double patterning technology (DPT) beyond 45 nm

Jungchul Park, Stephen Hsu, Douglas Van Den Broeke, J. Fung Chen, Mircea Dusa, Robert Socha, Jo Finders, Bert Vleeming, Anton van Oosten, Peter Nikolsky, Vincent Wiaux, Eric Hendrickx, Joost Bekaert, Geert Vandenberghe

Author Affiliations +

Proceedings Volume 6349, Photomask Technology 2006; 634922 (2006) https://doi.org/10.1117/12.692921
Event: SPIE Photomask Technology, 2006, Monterey, California, United States

Abstract

Double patterning technology (DPT) is a promising technique that bridges the anticipated technology gap from the use of 193nm immersion to EUV for the half-pitch device node beyond 45nm. The intended mask pattern is formed by two independent patterning steps. Using DPT, there is no optical imaging correlation between the two separate patterning steps except for the impact from mask overlay. In each of the single exposure step, we can relax the dense design pattern pitches by decomposing them into two half-dense ones. This allows a higher k₁ imaging factor for each patterning step. With combined patterns, we can achieve overall k₁ factor that exceeds the conventional Rayleigh resolution limit. This paper addresses DPT application challenges with respect to both mask error factor (MEF) and 2D patterning. In our simulations using DPT with relaxed feature pitch for each exposure step, the MEF for the line/space is fairly manageable for 32nm half-pitch and below. The real challenge for the 32nm half-pitch and below with DPT is how to deal with the printing of small 2D features resulting from the many cutting sites due to feature decomposition. Each split of a dense pattern generates two difficult-to-print line-end type features with dimension less than one-fifth or one-sixth of ArF wavelength. Worse, the proximity environment of the 2D cut features can then become quite complex. How to stitch them correctly back to the original target requires careful attention. Applying target bias can improve the printing performance in general. But using a model-based stitching error correction method seems to be a preferred solution.

Citation Download Citation

Jungchul Park, Stephen Hsu, Douglas Van Den Broeke, J. Fung Chen, Mircea Dusa, Robert Socha, Jo Finders, Bert Vleeming, Anton van Oosten, Peter Nikolsky, Vincent Wiaux, Eric Hendrickx, Joost Bekaert, and Geert Vandenberghe "Application challenges with double patterning technology (DPT) beyond 45 nm", Proc. SPIE 6349, Photomask Technology 2006, 634922 (20 October 2006); https://doi.org/10.1117/12.692921

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available