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20 October 2006 Point cleaning of mask blanks for extreme ultraviolet lithography
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The feasibility of removing defects from the surface of extreme ultraviolet (EUV) substrates by nanomachining is being investigated. A commercially available atomic force microscope (AFM) based photomask repair tool was used. A specific class of defects which has resisted all other removal techniques was targeted. Three AFM probes of varying sharpness were evaluated. All of the probes removed the majority of each but fell short of achieving the desired 2006 high spatial frequency roughness specification of 0.2nm. Results reported are preliminary; future work will focus on optimization of scanning parameters and tip geometry targeting specific residual defects reported in the text.
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Mike Brown, John Hartley, Sean Eichenlaub, Abbas Rastegar, Patricia Marmillion, and Ken Roessler "Point cleaning of mask blanks for extreme ultraviolet lithography", Proc. SPIE 6349, Photomask Technology 2006, 63492K (20 October 2006);

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