Paper
20 October 2006 Real-time ultra-sensitive ambient ammonia monitor for advanced lithography
Author Affiliations +
Abstract
In the semiconductor industry, control of ammonia at the parts-per-billion concentration level is critical to insure the integrity of the lithography process. Ammonia is emitted into wafer fab air by various semiconductor processes including CVD, wafer cleaning, coater tracks, and CMP, as well as from outdoor air. Exposure to even low parts-per-billion concentrations of ammonia during the photolithography process can lead to yield loss and unscheduled equipment downtime. Picarro, Inc. has developed a field-deployable, real time, ambient gas analyzer capable of continuously monitoring parts-per-trillion levels of ammonia in situ, and in real-time, thereby allowing a user to directly monitor ammonia levels in sensitive photo-lithography equipment.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric Crosson, Katsumi Nishimura, Yuhei Sakaguchi, Chris W. Rella, and Edward Wahl "Real-time ultra-sensitive ambient ammonia monitor for advanced lithography", Proc. SPIE 6349, Photomask Technology 2006, 63492R (20 October 2006); https://doi.org/10.1117/12.692934
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Ions

Lithography

Optical lithography

Absorption

Chromatography

Semiconductors

Semiconducting wafers

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