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20 October 2006 OPC to account for thick mask effect using simplified boundary layer model
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We present simplified symmetric boundary layer model (BLM) for Optical Proximity Correction (OPC) in order to account for thick (or 3D or topographic) mask effect. In this approach, near-field mask image which is quite different from original mask pattern due to mask topography is approximated as the original pattern and boundary layer around it. In this work, the boundary layer is determined as such that residual critical dimension (CD) error between measured CD and modeled CD from the BLM is minimized for various types of features. In case of sub-50 nm memory patterning, this BLM shows sufficient accuracy that root mean square of the residual CD is as small as 4.3 nm. Also, OPC speed with BLM is reasonably fast as the OPC time with BLM increases as only around twice as the conventional OPC time without BLM, which is acceptable in practice.
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Sangwook Kim, Young-Chang Kim, Sungsoo Suh, Sook Lee, Sungwoo Lee, Sukjoo Lee, Hanku Cho, Jootae Moon, Jonathan Cobb, and Sooryong Lee "OPC to account for thick mask effect using simplified boundary layer model", Proc. SPIE 6349, Photomask Technology 2006, 63493I (20 October 2006);

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