Paper
5 October 2006 High-power wide temperature range (-40°C ~100°C) operation of 1300-nm InGaAsP DFB lasers with asymmetric MQWs
Eun-Hwa Lee, Young-Hyun Kim, Yu-Dong Bae, Jae-Myung Baek, Joon-Whan Park, In Kim, Yun-Kyung Oh, Dong-Hoon Jang
Author Affiliations +
Proceedings Volume 6352, Optoelectronic Materials and Devices; 63520M (2006) https://doi.org/10.1117/12.688467
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
We demonstrate 1.25 Gbps 1300 nm InGaAsP/InP DFB lasers employing asymmetric MQWs structures operable over a wide temperature range of -40°C to 100°C, which has an optical power of 10 mW and a side mode suppression ratio (SMSR)and a Fabry-Perot suppression ratio (FPSR) of >30dB.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eun-Hwa Lee, Young-Hyun Kim, Yu-Dong Bae, Jae-Myung Baek, Joon-Whan Park, In Kim, Yun-Kyung Oh, and Dong-Hoon Jang "High-power wide temperature range (-40°C ~100°C) operation of 1300-nm InGaAsP DFB lasers with asymmetric MQWs", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63520M (5 October 2006); https://doi.org/10.1117/12.688467
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KEYWORDS
Quantum wells

Temperature metrology

Semiconductor lasers

High power lasers

Laser damage threshold

Electronics

Fiber to the x

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