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6 October 2006 The elastic strain field distribution of InAs/GaAs self-organized periodical quantum dots' array
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Proceedings Volume 6352, Optoelectronic Materials and Devices; 63521Y (2006) https://doi.org/10.1117/12.688966
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
We present detailed investigations about the elastic strain field distributions of the lens shaped InAs/GaAs selforganization quantum dots array, incorporating the effect of the longitudinal and transverse period distributions. The results show that the period distributions especially for the longitude period distribution have obvious influences to the strain field. The influence of the longitudinal and transverse periods on the strain field are just opposite in effect, especially for the line-scan path along the quantum dot's center-axis. Under suitable conditions, the effects of both periods on the strain field distribution can be partly eliminated. The results also demonstrate that one must take the quantum dot's period distribution into account when the effect of the strain field on the electronic structure is calculated. We conclude that using the isolated quantum dot model is not appropriate to simulate the strain field, or evaluate the influence of it on electronic structure.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yumin Liu and Zhongyuan Yu "The elastic strain field distribution of InAs/GaAs self-organized periodical quantum dots' array", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521Y (6 October 2006); https://doi.org/10.1117/12.688966
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