Enhanced terahertz emission from InAs quantum dots on GaAs

Hongkyu Park; Jeonghoi Kim; Euna Jung; Wonjun Choi; Jungil Lee; Haewook Han

doi:10.1117/12.691628

6 October 2006 Enhanced terahertz emission from InAs quantum dots on GaAs

Hongkyu Park, Jeonghoi Kim, Euna Jung, Wonjun Choi, Jungil Lee, Haewook Han

Proceedings Volume 6352, Optoelectronic Materials and Devices; 63521Z (2006) https://doi.org/10.1117/12.691628
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea

Abstract

Optically pumped terahertz emission has been observed in a wide range of semiconductors. We show that InAs quantum dots on GaAs can be used to significantly enhance terahertz emission compared with a bare GaAs surface.

Citation Download Citation

Hongkyu Park, Jeonghoi Kim, Euna Jung, Wonjun Choi, Jungil Lee, and Haewook Han "Enhanced terahertz emission from InAs quantum dots on GaAs", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521Z (6 October 2006); https://doi.org/10.1117/12.691628

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