Direct wafer bonding technology employing vacuum-cavity pre-bonding

Guohua Yang; Guorong He; Wanhua Zheng; Lianghui Chen

doi:10.1117/12.688864

6 October 2006 Direct wafer bonding technology employing vacuum-cavity pre-bonding

Guohua Yang, Guorong He, Wanhua Zheng, Lianghui Chen

Proceedings Volume 6352, Optoelectronic Materials and Devices; 63523I (2006) https://doi.org/10.1117/12.688864
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea

Abstract

A novel low temperature direct wafer bonding technology employing vacuum-cavity pre-bonding is proposed and applied in bonding of InGaAs/Si couple wafers under 300°C and InP/GaAs couple wafers under 350°C. Aligning accuracy of 0.5μm is achieved. During wafer bonding process the pressure on the couple wafers is 10MPa. The interface energy is sufficiently high to allow thinning of the wafers down from 350um to about 100um. And the tensile strength test indicates the bonding energy of bonded samples is about equal to the bonded samples at 550°C.

Citation Download Citation

Guohua Yang, Guorong He, Wanhua Zheng, and Lianghui Chen "Direct wafer bonding technology employing vacuum-cavity pre-bonding", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63523I (6 October 2006); https://doi.org/10.1117/12.688864

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