Paper
28 October 2006 Effects of Ti addiction in WO3 thin film ammonia gas sensor prepared by dc reactive magnetron sputtering
Ming Hu, Cholyun Yong, Youcai Feng, Yuqiang Lv, Lei Han, Jiran Liang, Haopeng Wang
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Abstract
WO3 sensing films (1500 Å) were deposited using dc reactive magnetron sputtering method on alumina substrate on which patterned interdigital Pt electrodes were previously formed. The additive Ti was sputtered with different thickness (100-500 Å) onto WO3 thin films and then the films as-deposited were annealed at 400°C in air for 3h. The crystal structure and chemical composition of the films were characterized by XRD and XPS analysis. The effect of Ti addition on sensitive properties of WO3 thin film to the NH3 gas was then discussed. WO3 thin films added Ti revealed excellent sensitivity and response characteristics in the presence of low concentration of NH3 (5-400 ppm) gas in air at 200°C operating temperature. Especially,in case 300 Å thickness of additive Ti, WO3 thin films have a promotional effect on the response speed to NH3 and selectivity enhanced with respect to other gases (CO, C2H5OH, CH4). The influence of different substrates, including alumina, silicon and glass, on sensitivity to NH3 gas has also been investigated.
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Ming Hu, Cholyun Yong, Youcai Feng, Yuqiang Lv, Lei Han, Jiran Liang, and Haopeng Wang "Effects of Ti addiction in WO3 thin film ammonia gas sensor prepared by dc reactive magnetron sputtering", Proc. SPIE 6358, Sixth International Symposium on Instrumentation and Control Technology: Sensors, Automatic Measurement, Control, and Computer Simulation, 635810 (28 October 2006); https://doi.org/10.1117/12.717784
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KEYWORDS
Thin films

Sensors

Sputter deposition

Chemical analysis

Gas sensors

Silicon films

Crystals

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