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12 October 2006 Optically pumped Si emitting device for midinfrared band
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Proceedings Volume 6368, Optoelectronic Devices: Physics, Fabrication, and Application III; 636803 (2006)
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
In this report, fundamentals, design, fabrication technology, and parameters are presented for contactless Si photonic emitter operated in the 3-5 um atmosphere transparency window at well above room temperature. To bypass the material band structure limitation, we utilized the above-bandgap light-induced free carrier thermal emission as a way to monitor the below-bandgap radiation that falls into 3 to 5 μm band (light down conversion). Two-facet external power conversion efficiency up to 5% is observed at T~500 K with further improvement to be expected. The device application to the IR dynamic scene simulation as well as it pros and cons in respect to thermal emitters and IR LEDs are also considered.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. K. Malyutenko and S. V. Chyrchyk "Optically pumped Si emitting device for midinfrared band", Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 636803 (12 October 2006);


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