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12 October 2006 Midinfrared LEDs versus thermal emitters in IR dynamic scene simulation devices
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Proceedings Volume 6368, Optoelectronic Devices: Physics, Fabrication, and Application III; 63680D (2006)
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
In a radical departure from conventional thermal emitter-based dynamic IR scene simulation devices, we have tested InAsSbP/InAs LEDs grown by liquid phase epitaxy and tuned at several peak-emitting wavelengths inside the mid-IR band. Light uniformity, radiation apparent temperature (Ta), thermal resistance, and self heating details were characterized at T=300°K in the microscale by calibrated infrared cameras in the 3-5 μm (light pattern) and 8-12 μm (heat pattern) bands. We show that LEDs are capable of simulating very hot (Ta ≥740°K) targets as well as cold objects and low observable with respect to a particular background. We resume that cost effective LEDs enable a platform for photonic scene projection devices able to compete with thermal microemitter MEMS technology in testing and stimulating very high-speed infrared sensors used for military and commercial applications. Proposals on how to further increase LEDs performance are given.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Malyutenko and A. Zinovchuk "Midinfrared LEDs versus thermal emitters in IR dynamic scene simulation devices", Proc. SPIE 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, 63680D (12 October 2006);


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