Synthesis, characterization, and physical properties of transition metal silicide nanowires

Song Jin; Andrew L. Schmitt; Lei Zhu; Yipu Song; Jeannine Szcech

doi:10.1117/12.687206

19 October 2006 Synthesis, characterization, and physical properties of transition metal silicide nanowires

Song Jin, Andrew L. Schmitt, Lei Zhu, Yipu Song, Jeannine Szcech

Proceedings Volume 6370, Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics; 63700O (2006) https://doi.org/10.1117/12.687206
Event: Optics East 2006, 2006, Boston, Massachusetts, United States

Abstract

We develop rational chemical strategies to synthesize novel one-dimensional nanowire materials of transition metal silicides, investigate their physical properties, and use them as nanoscale building blocks for the bottom-up assembly of integrated photonic, electronic, and spintronic nanosystems. Transition metal silicides are extremely important to microelectronics because of the ohmic contact and interconnect many silicides (NiSi, CoSi₂, and TiSi₂) provide. Furthermore, many silicides are direct bandgap semiconductors (CrSi₂, β-FeSi₂) and are promising for silicon-based photonics. The recent discovery of Fe_xCo_1-xSi alloys as ferromagnetic semiconductors make them promising for spintronic applications as well. Herein, we describe the chemical synthesis of free standing single-crystal nanowires (NWs) of FeSi, the only transition metal Kondo insulator and isostructural CoSi, an important metallic silicide for CMOS electronics. Straight and smooth FeSi and CoSi nanowires are produced on silicon substrates covered with a thin layer of silicon oxide through the decomposition of the single source organometallic precursors trans-Fe(SiCl₃)₂(CO)₄ and Co(SiCl₃)(CO)₄, respectively, in a simple chemical vapor deposition (CVD) process. Unlike typical vapor-liquid-solid (VLS) NW growth, silicide NWs form without the addition of metal catalysts, have no catalyst tips, and depend strongly on the surface employed. The physical properties of these new FeSi and CoSi nanowires, including electrical transport and X-ray spectroscopy, are reported. This general approach to silicide nanowire growth is likely to yield other functional silicide nanosystems with significant applications in nanoelectronics and nanophotonics, and for Fe_xCo_1-xSi, silicon based spintronics.

Citation Download Citation

Song Jin, Andrew L. Schmitt, Lei Zhu, Yipu Song, and Jeannine Szcech "Synthesis, characterization, and physical properties of transition metal silicide nanowires", Proc. SPIE 6370, Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics, 63700O (19 October 2006); https://doi.org/10.1117/12.687206

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