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19 October 2006 Mid-infrared electroluminescence from InAs self-assembled quantum dots
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Proceedings Volume 6386, Optical Methods in the Life Sciences; 63860E (2006)
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
Electroluminescence from self-assembled InAs quantum dots in cascade-like unipolar heterostructures is demonstrated. Initial results show weak luminescence signals in the mid-infrared from such structures, though more recent designs exhibit significantly stronger luminescence with improved designs of the active region of these devices. Further studies of mid-infrared emitting quantum dot structures have shown anisotropically polarized emission at multiple wavelengths. A qualitative explanation of such luminescence is developed and used to understand the growth morphology of buried quantum dots grown on AlAs layers. Finally, a novel design for future mid-infrared quantum dot emitters, intended to increase excited state scattering times and, at the same time, more efficiently extract carriers from the lowest states of our quantum dots, is presented.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Wasserman, S. H. Howard, C. Gmachl, S. A. Lyon, J. Cederberg, and E. A. Shaner "Mid-infrared electroluminescence from InAs self-assembled quantum dots", Proc. SPIE 6386, Optical Methods in the Life Sciences, 63860E (19 October 2006);

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