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2 October 2006 Design optimization of high-speed optical modulators
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Proceedings Volume 6389, Active and Passive Optical Components for Communications VI; 63890X (2006)
Event: Optics East 2006, 2006, Boston, Massachusetts, United States
The effects of design parameters on the modulating voltage and optical bandwidth are reported for lithium niobate, GaAs and polymer electro-optic modulators by using rigorous numerical modelling techniques. It is shown that by etching lithium niobate, the switching voltage can be reduced and the bandwidth improved. For a GaAs-based modulator using higher aluminium content in the buffer layer, the device length can be shortened for a given optical loss. It is also observed that the dielectric loss and impedance matching play a key role in velocity-matched high-speed modulators with low conductor loss. It is also indicated in the work that by using tantalium pentoxide coating, velocity matching can be achieved for GaAs modulators. The effects of a non-vertical side wall on the polarisation conversion and single mode operation and the bending loss of polymer rib waveguide for electro-optical modulators are also reported.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. M. Azizur Rahman, Shyqyri Haxha, Vesel Haxha, and Kenneth T. V. Grattan "Design optimization of high-speed optical modulators", Proc. SPIE 6389, Active and Passive Optical Components for Communications VI, 63890X (2 October 2006);

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