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5 October 2006 Development of 3.7μm InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy
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Abstract
We report on the liquid phase epitaxy (LPE) growth of an optimized double heterostructure (DH) 3-4 μm laser and the use of linear rapid slider boat technology for the production of quantum well (QW) structures based on InAsSb/InAsSbP. Typical characteristics of some of these prototype sources are presented and analyzed, including the results of SEM, X-ray diffraction, photo- and electro-luminescence characteristics of prototype DH & QW devices. The optimized 5 epi-layer diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 μm at 170 K with a threshold current density as low as 118 A/cm2 at 85 K. Coherent emission was obtained up to 210 K. LPE growth of InAsSb QW has been successfully obtained experimentally. The QW structure has been confirmed by SEM and electroluminescence measurements at different temperatures.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Yin, A. Krier, R. Jones, S. Krier, and D. Campbell "Development of 3.7μm InAsSb DH and QW diode laser and LED sources grown by liquid phase epitaxy", Proc. SPIE 6397, Technologies for Optical Countermeasures III, 639707 (5 October 2006); https://doi.org/10.1117/12.688254
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