Nickel silicide and titanium silicide formation: a comparison

Madhu Bhaskaran; Sharath Sriram; Anthony S. Holland; Johan du Plessis

doi:10.1117/12.695939

11 January 2007 Nickel silicide and titanium silicide formation: a comparison

Madhu Bhaskaran, Sharath Sriram, Anthony S. Holland, Johan du Plessis

Proceedings Volume 6414, Smart Structures, Devices, and Systems III; 64141B (2007) https://doi.org/10.1117/12.695939
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2006, Adelaide, Australia

Abstract

Silicides have been used in CMOS technology for some years mainly to reduce sheet resistance in the source and drain regions. This paper discusses in detail the formation of nickel silicide (NiSi) and titanium silicide (TiSi₂). The composition of silicides formed using sputtered and evaporated metals are compared. Metal films (titanium or nickel) on silicon deposited by DC magnetron sputtering or electron beam evaporation were vacuum annealed to form corresponding metal silicide thin films. The problem of oxygen contamination during silicidation is also discussed. Analyses of the silicide thin films formed were carried out using Auger Electron Spectroscopy (AES) depth profiles, Atomic Force Microscopy (AFM) surface scans, and surface profilometry for measurement of feature heights. The average surface roughness of the silicide thin films is also compared, and it was observed that nickel silicide thin films were much smoother than titanium silicide thin films.

Citation Download Citation

Madhu Bhaskaran, Sharath Sriram, Anthony S. Holland, and Johan du Plessis "Nickel silicide and titanium silicide formation: a comparison", Proc. SPIE 6414, Smart Structures, Devices, and Systems III, 64141B (11 January 2007); https://doi.org/10.1117/12.695939

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