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16 May 2007 Reflectance-difference spectroscopy as an optical probe for the in situ determination of doping levels in GaAs
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Proceedings Volume 6422, Sixth Symposium Optics in Industry; 64221H (2007) https://doi.org/10.1117/12.742363
Event: Sixth Symposium Optics in Industry, 2007, Monterrey, Mexico
Abstract
We report on in situ Reflectance Difference Spectroscopy measurements carried out on GaAs (001). Measurements were performed at temperatures of 580 °C and 430 °C, in both n and p-type doped films and for both (2x4) and c(4x4) reconstructions. Samples employed were grown by Molecular Beam Epitaxy with doping levels in the range from 1016 - 1019 cm-3. We demonstrate the potential of Reflectance Difference Spectroscopy for impurity level determinations under growth conditions.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Lastras-Martínez, I. Lara-Velázquez, R. E. Balderas-Navarro, J. Ortega-Gallegos, and L. F. Lastras-Martínez "Reflectance-difference spectroscopy as an optical probe for the in situ determination of doping levels in GaAs", Proc. SPIE 6422, Sixth Symposium Optics in Industry, 64221H (16 May 2007); https://doi.org/10.1117/12.742363
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