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19 February 2007 Power-scaling of optically pumped semiconductor lasers
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Abstract
Power-scaling of optically pumped semiconductor lasers (OPSL's) using a resonator with multiple OPS chips is demonstrated. With a 3-chip cavity and intra-cavity second harmonic generation, we obtain 55W of TEM00 mode output at 532 nm and 66 W in multi-transverse mode. In addition, we describe the design of a periodic dynamically stable resonator that allows scaling to more than 4 chips and demonstrate that the output power scales with the number of chips in the cavity.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lukas E. Hunziker, Qi-Ze Shu, Dominik Bauer, Chris Ihli, Guido J. Mahnke, Maxence Rebut, Juan R. Chilla, Andrea L. Caprara, Hailong Zhou, Eli S. Weiss, and Murray K. Reed "Power-scaling of optically pumped semiconductor lasers", Proc. SPIE 6451, Solid State Lasers XVI: Technology and Devices, 64510A (19 February 2007); https://doi.org/10.1117/12.710243
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