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14 February 2007 Comparison between stimulated Raman and Brillouin scattering processes in magnetized doped III-V semiconductors
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In the present paper, using the hydrodynamic model of semiconductor plasmas and following the coupled mode approach an analytical investigation of the stimulated Raman (SRS) and Brillouin (SBS) scatterings of the Stokes mode is undertaken in magnetoactive doped III-V semiconductors. These phenomena have been studied considering that the second-order forces responsible for them are different, viz., the finite differential polarizability gives rise to SRS, while the material properties like piezoelectricity and electrostrictive strain produces SBS in the medium. Gain coefficients, threshold pump intensities, and optimum pulse durations for the onset of SRS and SBS are estimated. The qualitative behavior of transient gain coefficients is found to be in agreement with the experimental and other theoretical observations. The proper selection of doping concentration and an externally applied magnetic field substantially enhances the gain coefficients of SBS and SRS processes. The ratio between the two gain constants indicates that for the same pump field SBS exhibits higher gain than SRS by two orders of magnitudes. The analysis explains satisfactorily the competition between stimulated Raman and Brillouin processes in the short- and long-pulse duration regimes. Numerical estimates have been made for n-type doped InSb crystal at 77K duly irradiated by 10.6&mgr;m CO2 laser.
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Nawal Kishore, Manjeet Singh, and Praveen Aghamkar "Comparison between stimulated Raman and Brillouin scattering processes in magnetized doped III-V semiconductors", Proc. SPIE 6455, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications VI, 645511 (14 February 2007);

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