Paper
7 February 2007 808 nm tapered diode lasers optimized for high output power and nearly diffraction-limited beam quality in pulse mode operation
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Abstract
808 nm tapered lasers have been investigated under current pulsing conditions without thermal load. The pulse length was 100 ns. The lasers are based on a super-large optical cavity structure with a very small vertical divergence angle of 18° (FWHM). The output power, beam quality and spectral behavior of the lasers were measured. Resonator geometries with different ridge waveguide lengths and taper angles were used for the optimisation of output power and beam quality. As a result, 27 W output power has been achieved. Nearly diffraction-limited beam quality up to 9 W has been obtained with an optimised lateral geometry. At even higher power, spectral broadening and beam quality degradation of the lasers were observed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ole Bjarlin Jensen, Andreas Klehr, Frank Dittmar, Bernd Sumpf, Götz Erbert, Peter E. Andersen, and Paul Michael Petersen "808 nm tapered diode lasers optimized for high output power and nearly diffraction-limited beam quality in pulse mode operation", Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64560A (7 February 2007); https://doi.org/10.1117/12.700325
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Cited by 2 scholarly publications.
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KEYWORDS
Pulsed laser operation

Monochromatic aberrations

Semiconductor lasers

Waveguides

Continuous wave operation

Diodes

Laser vision correction

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