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7 February 2007 100-W+ diode laser bars show > 71% power conversion from 790- nm to 1000-nm and have clear route to > 85%
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Focused development under the DARPA SHEDs program has lead to extremely high power conversion efficiency in the 9xx-nm wavelength band, leading to bars with efficiency in excess of 74%. We review progress in advancing efficiency and detail the route to > 85% at room temperature. The 9xx-nm wavelength band is commercially used for pumping Ytterbium-doped solid-state crystals and fiber lasers - only one of many diode laser markets. Fortunately, the lessons learned under SHEDs are transferable to other wavelengths. We report breakthrough efficiency results in the 8xx-nm band, for example showing 71% power conversion efficiency from 790-nm bars at powers > 100-W for CW and QCW packaging and testing. These wavelengths are required for pumping Neodymium-doped crystals, as used in the majority of fielded high power Diode Pumped Solid-State Laser systems. High efficiency is delivered using low voltage SHEDs designs, in combination with work to optimize the performance of the quantum well.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Crump, Weimin Dong, Mike Grimshaw, Jun Wang, Steve Patterson, Damian Wise, Mark DeFranza, Sandrio Elim, Shiguo Zhang, Mike Bougher, Jason Patterson, Suhit Das, Jake Bell, Jason Farmer, Mark DeVito, and Rob Martinsen "100-W+ diode laser bars show > 71% power conversion from 790- nm to 1000-nm and have clear route to > 85%", Proc. SPIE 6456, High-Power Diode Laser Technology and Applications V, 64560M (7 February 2007);

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