Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs

T. Kawashima; T. Nagai; D. Iida; A. Miura; Y. Okadome; Y. Tsuchiya; M. Iwaya; S. Kamiyama; H. Amano; I. Akasaki

doi:10.1117/12.717182

6 February 2007 Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs

T. Kawashima, T. Nagai, D. Iida, A. Miura, Y. Okadome, Y. Tsuchiya, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki

Author Affiliations +

Proceedings Volume 6468, Physics and Simulation of Optoelectronic Devices XV; 64680S (2007) https://doi.org/10.1117/12.717182
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We report on low-defect-density non-polar a-plane and m-plane GaN films grown by sidewall epitaxial lateral overgrowth (SELO) technique. Dislocations and stacking faults were decreased markedly over the whole area, and surface roughness was decreased with decreasing defect density. The photoluminescence intensity of SELO a-plane and m-plane GaN was about 200 times higher than that of a-plane and m-plane GaN template. We also fabricated and characterized LEDs on a-plane and m-plane GaN using SELO technique. The light power of LEDs increased with decreasing of threading dislocation.

Citation Download Citation

T. Kawashima, T. Nagai, D. Iida, A. Miura, Y. Okadome, Y. Tsuchiya, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki "Characterization of low-defect-density a-plane and m-plane GaN and fabrication of a-plane and m-plane LEDs", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680S (6 February 2007); https://doi.org/10.1117/12.717182

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