Mitigating hot phonons in high power optoelectronic devices based on wide gap semiconductors

Jacob B. Khurgin

doi:10.1117/12.705110

8 February 2007 Mitigating hot phonons in high power optoelectronic devices based on wide gap semiconductors

Jacob B. Khurgin

Proceedings Volume 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV; 64710Y (2007) https://doi.org/10.1117/12.705110
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

This work discusses critical role played by hot phonons in limiting high speed performance of electronic and optical devices based on wide gap nitride semiconductors A simple model is introduced that explains velocity saturation in the wide bandgap semiconductors and, based, on the experimental data, show that hot phonons in nitrides present unique challenge. Various methods of mitigating the effects of hot phonons - ranging from creating conditions for stimulated phonon emission to use of disorder are discussed.

Citation Download Citation

Jacob B. Khurgin "Mitigating hot phonons in high power optoelectronic devices based on wide gap semiconductors", Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 64710Y (8 February 2007); https://doi.org/10.1117/12.705110

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