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1 February 2007Studies of the critical electric field and L valley offset of a semiconductor characterized by terahertz radiation
The amplitudes of terahertz radiation are measured for a series of GaAs surface intrinsic-n+ (SIN+) structures with
various built-in surface electric fields as the bias. As the surface field is lower than the so-called "critical electric field"
related with the energy difference between the &Ggr; to L valley of the semiconductor, the amplitude is proportional to the
product of the surface field and the number of photo-excited carriers. As the intensity of surface field exceeds the critical
field, the THz amplitude is independent of the surface field but proportional the number of the photo-excited carriers.
Our study proposed two optimal conditions for an SIN+ structure to serve as a THz emitter: the width of its intrinsic layer
is nearly equal to the penetration depth of the pump beam, and the intensity of built-in electric field is nearly equal to the
critical electric field. Notably, the critical field determined from the THz amplitude under various electric fields provides
one way to estimate the &Ggr; to L valley splitting in semiconductors.
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J. S. Hwang, H. C. Lin, C. K. Chang, T. S. Wang, K. L. Lin, L. S. Chang, Y. T. Lu, "Studies of the critical electric field and L valley offset of a semiconductor characterized by terahertz radiation," Proc. SPIE 6472, Terahertz and Gigahertz Electronics and Photonics VI, 647203 (1 February 2007); https://doi.org/10.1117/12.700142