Paper
8 February 2007 Narrow-width photoluminescence spectra of InGaN quantum wells grown on GaN (0001) substrates with misorientation toward [11-00] direction
Koichi Tachibana, Hajime Nago, Shin-ya Nunoue
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Abstract
The optical properties of InGaN quantum wells on misoriented GaN (0001) substrates were investigated. The fluctuation of peak wavelength and full width at half maximum of micro-photoluminescence from InGaN quantum wells was large when the misorientation angle was 0.0o. The micro-photoluminescence showed narrow-width spectra, with full width at half maximum below 60 meV, of InGaN quantum wells grown on GaN (0001) substrates with a misorientation angle of around 0.28o toward [11-00] direction. These results indicate that InGaN quantum wells have high crystalline quality when InGaN quantum wells are grown with misorientation angle between 0.2o and 0.3o toward [11-00] direction.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Koichi Tachibana, Hajime Nago, and Shin-ya Nunoue "Narrow-width photoluminescence spectra of InGaN quantum wells grown on GaN (0001) substrates with misorientation toward [11-00] direction", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647307 (8 February 2007); https://doi.org/10.1117/12.699662
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Cited by 2 scholarly publications.
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KEYWORDS
Indium gallium nitride

Quantum wells

Gallium nitride

Atomic force microscopy

Crystals

Optical properties

Gallium

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