AlGaN/GaN MOS transistors using crystalline ZrO2 as gate dielectric

Xing Gu; Natalia Izyumskaya; Vitaly Avrutin; Jinqiao Xie; Serguei Chevtchenko; Bo Xiao; Hadis Morkoç

doi:10.1117/12.706808

8 February 2007 AlGaN/GaN MOS transistors using crystalline ZrO₂ as gate dielectric

Xing Gu, Natalia Izyumskaya, Vitaly Avrutin, Jinqiao Xie, Serguei Chevtchenko, Bo Xiao, Hadis Morkoç

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 64730S (2007) https://doi.org/10.1117/12.706808
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Epitaxial growth of ZrO₂ has been achieved on MOCVD-grown GaN(0001) templates by oxides molecular beam epitaxy using reactive H₂O₂ for oxygen and organometallic source for Zr. Utilizing a low temperature buffer layer followed by high temperature insitu annealing and high-temperature growth, monoclinic (100)-oriented ZrO₂ thin films were obtained. The full width at half maximum of ZrO₂ (100) rocking curve was 0.4 arc degree for 30-nm-thick films and the rms roughness for a 5&mgr;m by 5 &mgr;m AFM scan was 4 Å. The employment of epitaxial ZrO₂ layer in the AlGaN/GaN heterojunction field effect trasnsistor as a gate dielectric has resulted in the increase of the saturation-current density and pinch-off voltage as well as in near symmetrical gate-drain I-V behavior.

Citation Download Citation

Xing Gu, Natalia Izyumskaya, Vitaly Avrutin, Jinqiao Xie, Serguei Chevtchenko, Bo Xiao, and Hadis Morkoç "AlGaN/GaN MOS transistors using crystalline ZrO₂ as gate dielectric", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730S (8 February 2007); https://doi.org/10.1117/12.706808

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