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8 February 2007 Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications
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GaN / Al1-xGaxN-based hetero-structures have demonstrated a versatility in RF electronic applications which is practically unmatched by any other material system. There are many device structures under consideration for use in RF and Power amplifiers, suitable for both commercial and military applications. In this paper, we will discuss HEMT device design and growth of GaN/AlGaN layers on semi-insulating SiC substrates by MBE and MOCVD. Both of the growth techniques have shown high quality GaN /AlGaN epitaxial layers and have demonstrated very uniform epitaxial layers with high mobility. The MBE growth was carried out using RF Plasma Assisted MBE. The MOCVD growth was performed in a close-coupled showerhead reactor operating at low pressure. All HEMT structures were grown on 2-inch semi-insulating SiC substrates. Several of the HEMT wafers grown by these two growth techniques were characterized in detail using AFM measurements of the surface roughness, and non-destructive characterization via contact-less sheet resistance mapping, optical reflectance, and high-resolution X-ray diffraction. Several of the wafers were fabricated into HEMT devices, and the results on these devices are also presented.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ashok K. Sood, Yash R. Puri, Frederick W. Clarke, Jie Deng, James C. M. Hwang, Steven K. Brierley, M. Asif Khan, Amir Dabiran, Peter Chow, Oleg A. Laboutin, and Roger E. Welser "Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647318 (8 February 2007);


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