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20 February 2007 Fabrication of well-aligned ZnO nanorods by hydrothermal process using GaN epitaxial layer
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One dimensional (1-D) ZnO nanorod structure of hexagonal shape was fabricated on epitaxial GaN layer by hydrothermal method. The growth of GaN epitaxial layer was carried out in a two-flow horizontal MOCVD reactor maintained at a pressure of 200 torr. Firstly, a 25 nm thick GaN buffer layer was grown at 520 °C. Then 2~3&mgr;m thick GaN epilayer was deposited at 1070 °C. Trimethylgallium (TMG) and NH3 were used as Ga and N source, and H2 gas was used as carrier gas. After the deposition of GaN epilayer thin-film, single crystalline ZnO nanorod was fabricated in aqueous solution. XRD and FE-SEM results showed ZnO nanorod arrays were oriented highly along the (002) plane. The ZnO nanorod was analyzed to have good quality crystallization by FE-TEM. The SAED pattern has shown that ZnO nanorod was grown in the direction along (002)-plane. Photoluminescence (PL) has shown that the GaN-ZnO hetero-structure has shown ultra-violet lasing action at room temperature. Narrow and strong ultra-violet peak was observed in comparison with PL result from epitaxial GaN layer. The analysis results have proved that aqueous solution growth method developed in the present work can be a good application for optical electronic device.
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Jae-Min Jang, Sung-Hak Yi, Seung-Kyu Choi, Jung-A Kim, and Woo-Gwang Jung "Fabrication of well-aligned ZnO nanorods by hydrothermal process using GaN epitaxial layer", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64741N (20 February 2007);

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