Two order increase in the optical emission intensity of CMOS Integrated Circuit Si LED’s (450nm – 750nm). Injection–avalanche based n+pn and p+np designs

Lukas W. Snyman; Monuko du Plessis; Herzl Aharoni

doi:10.1117/12.702292

1 March 2007 Two order increase in the optical emission intensity of CMOS integrated circuit Si LED's (450nm - 750nm). Injection-avalanche based n⁺pn and p⁺np designs

Lukas W. Snyman, Monuko du Plessis, Herzl Aharoni

Author Affiliations +

Proceedings Volume 6477, Silicon Photonics II; 64770T (2007) https://doi.org/10.1117/12.702292
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We report on an increase in emission intensity of up to 10 nW / microns² that has been realized with a new novel two junction, diagonal avalanche control and minority carrier injection silicon CMOS light emitting device. The device utilizes a four terminal configuration with two shallow n⁺p junctions, embedded in a p substrate. One junction is kept in deep avalanche and light emitting mode, while the other junction is forward biased and minority carrier electrons are injected into the avalanching junction. The device has been realized using standard 0.35 micron CMOS design rules and fabrication technology and operates at 9V in the current range 0.1 - 3mA. The optical emission intensity is anout two orders higher than that for previous single junction n⁺ p light emitting junctions. The optical output is about three orders higher than the low frequency detectivity limit of silicon p-i-n detectors of comparable dimensions. The realized characteristics may enable diverse opto-electronic applications in standard CMOS silicon technology based integrated circuitry.

Citation Download Citation

Lukas W. Snyman, Monuko du Plessis, and Herzl Aharoni "Two order increase in the optical emission intensity of CMOS integrated circuit Si LED's (450nm - 750nm). Injection-avalanche based n⁺pn and p⁺np designs", Proc. SPIE 6477, Silicon Photonics II, 64770T (1 March 2007); https://doi.org/10.1117/12.702292

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available