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9 February 2007 High performance total internal reflection type optical switches in silicon-on-insulator
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The requirement of a precise and controllable reflection interface in total internal reflection type optical switches is widely acknowledged. When these switches are based upon carrier injection such as those fabricated in silicon-oninsulator the ability to set up a precise reflection interface becomes difficult due to the diffusion of carriers. This diffusion of carriers across the reflection interface creates a refractive index gradient which is likely to cause the input light to be imperfectly reflected into the output port, which is obviously less efficient than reflection from a precise interface in terms of loss due to the absorption by the free carriers and the directivity of the reflected wave. In our work we propose the use of a barrier positioned along the reflection interface, and around a completely enclosed injection region to prevent diffusion of carriers, and therefore set up a precise reflection interface. The barrier will also improve the injection efficiency since the carriers are being injected into a much smaller volume. This will, in turn, lead to a reduced switching current and faster switching speeds. This paper reports the modeling of the device and predicts the bandwidth performance for one specific switch design.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Thomson, A. P. Knights, D. Walters, G. Z. Mashanovich, B. Timotijevic, Frederic Y. Gardes, and G. T. Reed "High performance total internal reflection type optical switches in silicon-on-insulator", Proc. SPIE 6477, Silicon Photonics II, 647713 (9 February 2007);


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