Paper
2 February 2007 Demonstration of 640×512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) focal plane array
S. D. Gunapala, S. V. Bandara, C. J. Hill, D. Z. Ting, J. K. Liu, S. B. Rafol, E. R. Blazejewski, J. M. Mumolo, S. A. Keo, S. Krishna, Y.-C. Chang, C. A. Shott
Author Affiliations +
Abstract
Epitaxially grown self-assembled InAs/InGaAs/GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared (LWIR) focal plane arrays (FPAs). The Dot-in-a-Well (DWELL) structures were experimentally shown to absorb both 45° and normal incident light, therefore a reflection grating structure was used to enhance the quantum efficiency. The devices exhibit peak responsivity out to 8.1 microns, with peak detectivity reaching ~ 1 x 1010 Jones at 77 K. The devices were fabricated into the first long-wavelength 640x512 pixel QDIP imaging FPA, which has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60K operating temperature.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. D. Gunapala, S. V. Bandara, C. J. Hill, D. Z. Ting, J. K. Liu, S. B. Rafol, E. R. Blazejewski, J. M. Mumolo, S. A. Keo, S. Krishna, Y.-C. Chang, and C. A. Shott "Demonstration of 640×512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) focal plane array", Proc. SPIE 6479, Quantum Sensing and Nanophotonic Devices IV, 64790V (2 February 2007); https://doi.org/10.1117/12.698051
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Cited by 4 patents.
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KEYWORDS
Staring arrays

Sensors

Quantum efficiency

Long wavelength infrared

Absorption

Quantum dots

Quantum well infrared photodetectors

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