Cavity QED with quantum dots in semiconductor microcavities

M. T. Rakher; S. Strauf; Y. Choi; N. G. Stolz; K. J. Hennessey; H. Kim; A. Badolato; L. A. Coldren; E. L. Hu; P. M. Petroff; D. Bouwmeester

doi:10.1117/12.699427

6 February 2007 Cavity QED with quantum dots in semiconductor microcavities

M. T. Rakher, S. Strauf, Y. Choi, N. G. Stolz, K. J. Hennessey, H. Kim, A. Badolato, L. A. Coldren, E. L. Hu, P. M. Petroff, D. Bouwmeester

Author Affiliations +

Proceedings Volume 6481, Quantum Dots, Particles, and Nanoclusters IV; 648109 (2007) https://doi.org/10.1117/12.699427
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Cavity quantum electrodynamic (QED) effects are studied in semiconductor microcavities embedded with InGaAs quantum dots. Evidence of weak coupling in the form of lifetime enhancement (the Purcell effect) and inhibition is found in both oxide-apertured micropillars and photonic crystals. In addition, high-efficiency, low-threshold lasing is observed in the photonic crystal cavities where only 2-4 quantum dots exist within the cavity mode volume and are not in general spectrally resonant. The transition to lasing in these soft turn-on devices is explored in a series of nanocavities by observing the change in photon statistics of the cavity mode with increasing pump power near the threshold.

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M. T. Rakher, S. Strauf, Y. Choi, N. G. Stolz, K. J. Hennessey, H. Kim, A. Badolato, L. A. Coldren, E. L. Hu, P. M. Petroff, and D. Bouwmeester "Cavity QED with quantum dots in semiconductor microcavities", Proc. SPIE 6481, Quantum Dots, Particles, and Nanoclusters IV, 648109 (6 February 2007); https://doi.org/10.1117/12.699427

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