A study by GISAXS of PbTe/SiO2 multilayer deposited on Si(111)

G. Kellermann; E. Rodriguez; E. Jimenez; E. Chillcce; C. L. Cesar; L. C. Barbosa

doi:10.1117/12.701082

6 February 2007 A study by GISAXS of PbTe/SiO₂ multilayer deposited on Si(111)

G. Kellermann, E. Rodriguez, E. Jimenez, E. Chillcce, C. L. Cesar, L. C. Barbosa

Proceedings Volume 6481, Quantum Dots, Particles, and Nanoclusters IV; 64810A (2007) https://doi.org/10.1117/12.701082
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Multilayers of PbTe quantum dots embedded in SiO₂ were fabricated by alternatively use of Laser Ablation and Plasma Enhanced Chemical Vapor Deposition techniques. A set o samples containing different PbTe nanoparticles sizes was prepared for the study. The morphological properties of the nanostructured material were studied by means of grazing-incidence small-angle X-ray scattering (GISAXS) and x-ray reflectometry (XRR) techniques. A preliminary analysis of the GISAXS spectra provided information about the multilayer periodicity and its relationship to the size of the deposited PbTe nanoparticles.

Citation Download Citation

G. Kellermann, E. Rodriguez, E. Jimenez, E. Chillcce, C. L. Cesar, and L. C. Barbosa "A study by GISAXS of PbTe/SiO₂ multilayer deposited on Si(111)", Proc. SPIE 6481, Quantum Dots, Particles, and Nanoclusters IV, 64810A (6 February 2007); https://doi.org/10.1117/12.701082

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