Low-threshold current low-resistance 1.3 µm InAs–InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE

Hsin-Chieh Yu; Jyh-Shyang Wang; Yan-Kuin Su; Shoou-Jinn Chang; Hao-Chung Kuo; Fang-I Lai; Y. H. Chang; Hong-Pin D. Yang

doi:10.1117/12.697732

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8 February 2007 Low-threshold current low-resistance 1.3 &mgr;m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE

Hsin-Chieh Yu, Jyh-Shyang Wang, Yan-Kuin Su, Shoou-Jinn Chang, Hao-Chung Kuo, Fang-I Lai, Y. H. Chang, Hong-Pin D. Yang

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Proceedings Volume 6484, Vertical-Cavity Surface-Emitting Lasers XI; 64840E (2007) https://doi.org/10.1117/12.697732
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The processing technology of 1.3&mgr;m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE will be demonstrated. The threshold currents of the fabricated devices with 10 &mgr;m oxide-confined aperture are 0.7mA, which correspond to 890A/cm² threshold current density. And the threshold voltage of the device is 1.03V and maximum output power is 33 &mgr;W. The series resistance is 85 &OHgr; which is 10 times lower then our preliminary work and 3 times lower then intracavity contacted InAs-InGaAs quantum-dot VCSEL. This relatively lower resistance can even comparable with the best result reported in InGaAs oxide-confined VCSELs with intracavity contact.

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Hsin-Chieh Yu, Jyh-Shyang Wang, Yan-Kuin Su, Shoou-Jinn Chang, Hao-Chung Kuo, Fang-I Lai, Y. H. Chang, and Hong-Pin D. Yang "Low-threshold current low-resistance 1.3 &mgr;m InAs-InGaAs quantum-dot VCSELs with fully doped DBRs grown by MBE", Proc. SPIE 6484, Vertical-Cavity Surface-Emitting Lasers XI, 64840E (8 February 2007); https://doi.org/10.1117/12.697732

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