Properties of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.55um

James A. Gupta; Pedro J. Barrios; Greg J. Pakulski; Geof C. Aers; Juan A. Caballero; Daniel Poitras; Xiaohua Wu

doi:10.1117/12.714271

8 February 2007 Properties of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.55um

James A. Gupta, Pedro J. Barrios, Greg J. Pakulski, Geof C. Aers, Juan A. Caballero, Daniel Poitras, Xiaohua Wu

Proceedings Volume 6485, Novel In-Plane Semiconductor Lasers VI; 64850S (2007) https://doi.org/10.1117/12.714271
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The room-temperature 1.55 &mgr;m continuous-wave (CW) operation of single-lateral mode GaInNAsSb ridge waveguide lasers grown on GaAs is reported. Detailed measurements of the light output power and spectral properties were used to assess the device characteristics as a function of applied current and temperature in both CW and pulsed operation. An exemplary, 3&mgr;×750&mgr;m, device with a 92% high-reflectivity back facet coating exhibited a record low CW threshold current of 63~mA, with a peak output power of 15~mW. High-resolution modal gain spectra were extracted from amplified spontaneous emission measurements yielding the internal loss (8.0~cm^-1, transparency current (50~mA) and the wavelength dependence of the differential gain. The latter was used with careful measurements of the Fabry-Perot mode shift with injection current to determine the linewidth enhancement factor of 2.8 at the transparency current. The first measurement of intrinsic modulation frequency in 1.55 &mgr;m GaInNAsSb lasers is reported, based on the observed relative intensity noise (RIN). The RIN measurements indicate a maximum modulation frequency of 7.2~GHz, which is a promising result for future telecommunications applications.

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James A. Gupta, Pedro J. Barrios, Greg J. Pakulski, Geof C. Aers, Juan A. Caballero, Daniel Poitras, and Xiaohua Wu "Properties of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.55um", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 64850S (8 February 2007); https://doi.org/10.1117/12.714271

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