Paper
8 February 2007 High power pure-blue semiconductor lasers
Osamu Goto, Shigetaka Tomiya, Yukio Hoshina, Takayuki Tanaka, Makoto Ohta, Yoshitsugu Ohizumi, Yoshifumi Yabuki, Kenji Funato, Masao Ikeda
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Abstract
We developed high-power and long-lived AlGaInN-based pure-blue semiconductor lasers emitting in the 440-450 nm wavelength range. The half lifetime (the time for the output power to degrade to half its initial value in constant current mode) was estimated to be more than 10000 hours at a power of 0.75 W under continuous-wave operation at 35°C. Reducing the density of structural defects newly originating from the multiple quantum well active layer and reducing the operating current density were shown to be important for producing high-performance pure-blue lasers.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Osamu Goto, Shigetaka Tomiya, Yukio Hoshina, Takayuki Tanaka, Makoto Ohta, Yoshitsugu Ohizumi, Yoshifumi Yabuki, Kenji Funato, and Masao Ikeda "High power pure-blue semiconductor lasers", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 64850Z (8 February 2007); https://doi.org/10.1117/12.725162
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CITATIONS
Cited by 16 scholarly publications.
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KEYWORDS
Interfaces

Continuous wave operation

Gallium

Semiconductor lasers

Transmission electron microscopy

High power lasers

Quantum wells

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