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8 February 2007 Si/Ge elatform for lasers, amplifiers, and nonlinear optical devices based on the Raman Effect
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Abstract
The use of a silicon-germanium platform for the development of optically active devices will be discussed in this paper, from the perspective of Raman and Brillouin scattering phenomena. Silicon-Germanium is becoming a prevalent technology for the development of high speed CMOS transistors, with advances in several key parameters as high carrier mobility, low cost, and reduced manufacturing logistics. Traditionally, Si-Ge structures have been used in the optoelectronics arena as photodetectors, due to the enhanced absorption of Ge in the telecommunications band. Recent developments in Raman-based nonlinearities for devices based on a silicon-on-insulator platform have shed light on the possibility of using these effects in Si-Ge architectures. Lasing and amplification have been demonstrated using a SiGe alloy structure, and Brillouin/Raman activity from acoustic phonon modes in SiGe superlattices has been predicted. Moreover, new Raman-active branches and inhomogeneously broadened spectra result from optical phonon modes, offering new perspectives for optical device applications. The possibilities for an electrically-pumped Raman laser will be outlined, and the potential for design and development of silicon-based, Tera-Hertz wave emitters and/or receivers.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ricardo Claps, Dimitrios Dimitropoulos, Varun Raghunathan, Sasan Fathpour, Bahram Jalali, and Bernard Jusserand "Si/Ge elatform for lasers, amplifiers, and nonlinear optical devices based on the Raman Effect", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648510 (8 February 2007); https://doi.org/10.1117/12.699524
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