Translator Disclaimer
Paper
8 February 2007 Laser charactersitics and gain properties of the novel Ga(NAsP)/GaP material system for the integration to Si
Author Affiliations +
Abstract
The current status of the development of the novel dilute nitride Ga(NAsP)/GaP for the monolithic integration of optoelectronic functionality to Si is summarized from the concept, design and epitaxial optimization to the verification of direct energy gap and the realization of electrical injection laser devices at room temperature.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Kunert, K. Volz, and W. Stolz "Laser charactersitics and gain properties of the novel Ga(NAsP)/GaP material system for the integration to Si", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648513 (8 February 2007); https://doi.org/10.1117/12.714261
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
Back to Top