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8 February 2007Laser charactersitics and gain properties of the novel Ga(NAsP)/GaP material system for the integration to Si
The current status of the development of the novel dilute nitride Ga(NAsP)/GaP for the monolithic integration
of optoelectronic functionality to Si is summarized from the concept, design and epitaxial optimization to the
verification of direct energy gap and the realization of electrical injection laser devices at room temperature.
B. Kunert,K. Volz, andW. Stolz
"Laser charactersitics and gain properties of the novel Ga(NAsP)/GaP material system for the integration to Si", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648513 (8 February 2007); https://doi.org/10.1117/12.714261
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B. Kunert, K. Volz, W. Stolz, "Laser charactersitics and gain properties of the novel Ga(NAsP)/GaP material system for the integration to Si," Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648513 (8 February 2007); https://doi.org/10.1117/12.714261