Translator Disclaimer
26 February 2007 High-temperature silicon evanescent lasers
Author Affiliations +
We present an electrically pumped silicon evanescent laser that utilizes a silicon waveguide and offset AlGaInAs quantum wells. The silicon waveguide is fabricated on a Silicon-On-Insulator (SOI) wafer and is bonded with the AlGaInAs quantum well structure using low temperature O2 plasma-assisted wafer bonding. The optical mode in the hybrid waveguide is predominantly confined in the passive silicon waveguide and evanescently couples into the III-V active region providing optical gain via electrical current injection. The device lases continuous wave at 1577 nm with a threshold of 65 mA at 15 °C. The maximum single-sided fiber-coupled cw output power is 1.8 mW. The maximum operating temperature is 40 °C mainly limited by a high series resistance of the device. Operation up to 60 °C should be achievable by lowering the series resistance and thermal impedance.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John E. Bowers, Hyundai Park, Alexander W. Fang, Richard Jones, Oded Cohen, and Mario J. Paniccia "High-temperature silicon evanescent lasers", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648515 (26 February 2007);

Back to Top