Fundamental mechanisms of electroluminescence refrigeration in heterostructure light-emitting diodes

S.-Q. Yu; J.-B. Wang; D. Ding; S. R. Johnson; D. Vasileska; Y.-H. Zhang

doi:10.1117/12.701301

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26 February 2007 Fundamental mechanisms of electroluminescence refrigeration in heterostructure light-emitting diodes

S.-Q. Yu, J.-B. Wang, D. Ding, S. R. Johnson, D. Vasileska, Y.-H. Zhang

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Proceedings Volume 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI; 648604 (2007) https://doi.org/10.1117/12.701301
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The fundamental mechanisms of electroluminescence (EL) refrigeration in heterostructure light emitting diodes, is examined via carrier energy loss (and gain) during transport, relaxation, and recombination, where the contribution of electrons and holes are treated separately. This analysis shows that the EL refrigeration process is a combination of thermoelectric cooling that mainly occurs near the metal/semiconductor contacts and radiative recombination which mainly occurs in the active region. In semiconductors such as GaAs, electrons and holes make different contributions to the refrigeration processes as a result of their different densities of states.

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S.-Q. Yu, J.-B. Wang, D. Ding, S. R. Johnson, D. Vasileska, and Y.-H. Zhang "Fundamental mechanisms of electroluminescence refrigeration in heterostructure light-emitting diodes", Proc. SPIE 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 648604 (26 February 2007); https://doi.org/10.1117/12.701301

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