Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate

Sang-Ho Seo; Kyoung-Do Kim; Jae-Sung Kong; Jang-Kyoo Shin; Pyung Choi

doi:10.1117/12.703770

21 February 2007 Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate

Sang-Ho Seo, Kyoung-Do Kim, Jae-Sung Kong, Jang-Kyoo Shin, Pyung Choi

Author Affiliations +

Proceedings Volume 6501, Sensors, Cameras, and Systems for Scientific/Industrial Applications VIII; 650111 (2007) https://doi.org/10.1117/12.703770
Event: Electronic Imaging 2007, 2007, San Jose, CA, United States

Abstract

In this paper, a new CMOS image sensor is presented, which uses a PMOSFET-type photodetector with a transfer gate that has a high and variable sensitivity. The proposed CMOS image sensor has been fabricated using a 0.35 &mgr;m 2-poly 4- metal standard CMOS technology and is composed of a 256 × 256 array of 7.05 × 7.10 &mgr;m pixels. The unit pixel has a configuration of a pseudo 3-transistor active pixel sensor (APS) with the PMOSFET-type photodetector with a transfer gate, which has a function of conventional 4-transistor APS. The generated photocurrent is controlled by the transfer gate of the PMOSFET-type photodetector. The maximum responsivity of the photodetector is larger than 1.0 × 10³ A/W without any optical lens. Fabricated 256 × 256 CMOS image sensor exhibits a good response to low-level illumination as low as 5 lux.

Citation Download Citation

Sang-Ho Seo, Kyoung-Do Kim, Jae-Sung Kong, Jang-Kyoo Shin, and Pyung Choi "Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate", Proc. SPIE 6501, Sensors, Cameras, and Systems for Scientific/Industrial Applications VIII, 650111 (21 February 2007); https://doi.org/10.1117/12.703770

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