High-Speed Optical TIR Switches with PLZT Thin Films

T. Kawaguchi; H. Higashino; K. Setsune; O. Yamazaki; K. Wasa

doi:10.1117/12.938137

3 November 1986 High-Speed Optical TIR Switches with PLZT Thin Films

T. Kawaguchi, H. Higashino, K. Setsune, O. Yamazaki, K. Wasa

Proceedings Volume 0651, Integrated Optical Circuit Engineering III; (1986) https://doi.org/10.1117/12.938137
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria

Abstract

A new structure using strip-loaded waveguides is proposed for TIR switches with PLZT thin films. The TIR switches realized high-speed intensity modulation of LD light (0.83 μm) at 2 GHz. The modulation bandwidth of the lumped-constant electrodes and the traveling-wave electrodes was 7.1 GHz and more than 26.5 GHz, respectively. The modulation bandwidth is estimated to be more than 100 GHz.

Citation Download Citation

T. Kawaguchi, H. Higashino, K. Setsune, O. Yamazaki, and K. Wasa "High-Speed Optical TIR Switches with PLZT Thin Films", Proc. SPIE 0651, Integrated Optical Circuit Engineering III, (3 November 1986); https://doi.org/10.1117/12.938137

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