Paper
15 March 2007 Initial experience establishing an EUV baseline lithography process for manufacturability assessment
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Abstract
The International Venture for Nanolithography (INVENT) initiative announced in mid 2005, a unique industry-university consortium between the College of Nanoscale Science and Engineering at Albany and a group of leading edge integrated device manufacturers, has launched an extensive R&D program on EUV lithography (EUVL). The overall scope of the INVENT EUVL program, the status of our efforts to establish a baseline lithography process on a full-field EUVL scanner, and our progress in evaluating EUV resist materials, in designing a custom reticle for scanner characterization and in developing an actinic EUV mask imaging microscope, are discussed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
O. R. Wood II, D. Back, R. Brainard, G. Denbeaux, D. Goldfarb, F. Goodwin, J. Hartley, K. Kimmel, C. Koay, B. La Fontaine, J. Mackey, B. Martinick, W. Montgomery, P. Naulleau, U. Okoroanyanwu, K. Petrillo, B. Pierson, M. Tittnich, S. Trogisch, T. Wallow, and Y. Wei "Initial experience establishing an EUV baseline lithography process for manufacturability assessment", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170U (15 March 2007); https://doi.org/10.1117/12.714016
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Cited by 7 scholarly publications.
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KEYWORDS
Extreme ultraviolet lithography

Extreme ultraviolet

Reticles

Photomasks

Contamination

Reflectivity

Image resolution

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