Defect inspection of positive and negative sub-60nm resist pattern printed with variable shaped e-beam direct write lithography

C. Arndt; C. Hohle; J. Kretz; T. Lutz; M. Richter; K. Keil; M. Lapidot; D. Zemach; M. Kindler

doi:10.1117/12.712078

15 March 2007 Defect inspection of positive and negative sub-60nm resist pattern printed with variable shaped E-Beam direct write lithography

C. Arndt, C. Hohle, J. Kretz, T. Lutz, M. Richter, K. Keil, M. Lapidot, D. Zemach, M. Kindler

Author Affiliations +

Proceedings Volume 6517, Emerging Lithographic Technologies XI; 651711 (2007) https://doi.org/10.1117/12.712078
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

For Electron Beam Direct Write (EBDW) a systematic investigation of defect density using a Negevtech 3100 darkfield inspection system was performed. A special defect learning pattern for memory applications with coverage of 50% was designed and printed partially on 300mm wafers using chemically amplified positive and negative E-Beam resists. By optical defect measurements post litho it was possible to inspect 50nm dense lines to characterize the exposure system as well as the used resist process. Using this method a large exposed area in millimeter range can be inspected and an overview on exposure quality can be gained in a reasonable amount of time. Particle measurements were performed additionally to distinguish between particles and exposure issues. By using darkfield measurements, process related issues like development problems and resist residuals can be found, as well as writing issues like shot butting and write field stitching can be quickly determined and controlled with this method. In this paper, the measurement methodology is described as well as the effect of writer imperfections on the darkfield images. A pareto analysis is performed and shows the frequency of occurrence of different defects. Measures to reduce defects - especially on the tool side - are given. The method is feasible to use in a regular check to control tool and process performance.

Citation Download Citation

C. Arndt, C. Hohle, J. Kretz, T. Lutz, M. Richter, K. Keil, M. Lapidot, D. Zemach, and M. Kindler "Defect inspection of positive and negative sub-60nm resist pattern printed with variable shaped E-Beam direct write lithography", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651711 (15 March 2007); https://doi.org/10.1117/12.712078

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available