Soft UV-based nanoimprint lithography for large-area imprinting applications

T. Glinsner; U. Plachetka; T. Matthias; M. Wimplinger; P. Lindner

doi:10.1117/12.713026

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21 March 2007 Soft UV-based nanoimprint lithography for large-area imprinting applications

T. Glinsner, U. Plachetka, T. Matthias, M. Wimplinger, P. Lindner

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Proceedings Volume 6517, Emerging Lithographic Technologies XI; 651718 (2007) https://doi.org/10.1117/12.713026
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

The International Technology Roadmap for Semiconductors (ITRS) lays out a quite challenging path for the further development of the patterning techniques needed to create the ever-smaller feature sizes. In recent years the standard lithography reached its limits due to the diffraction effects encountered and the necessary complexity of compatible masks and projection optics. The restrictions on wavelength, in combination with high process and equipment costs, make low cost, simple imprinting techniques competitive with next generation lithography methods. Nanoimprint Lithography (NIL) is predicted as one candidate for the 32 nm and 22 nm technological nodes according to the ITRS. There are several NIL techniques which can be categorized depending on the process parameters and the imprinting method - either step & repeat or full wafer imprinting. A variety of potential applications has been demonstrated by using Nanoimprint Lithography (e.g. SAW devices, vias and contact layers with dual damascene imprinting process, bragg structures, patterned media) [1,2]. In Soft UV-NIL processes the overlay alignment accuracy was not demonstrated to be prepared for nanoelectronic devices; however other applications are already in high volume manufacturing such as the production of optical components (e.g. micro lenses).

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T. Glinsner, U. Plachetka, T. Matthias, M. Wimplinger, and P. Lindner "Soft UV-based nanoimprint lithography for large-area imprinting applications", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651718 (21 March 2007); https://doi.org/10.1117/12.713026

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