Paper
21 March 2007 Low-viscosity and fast-curing polymer system for UV-based nanoimprint lithography and its processing
Marko Vogler, Markus Bender, Ulrich Plachetka, Andreas Fuchs, Sabine Wiedenberg, Freimut Reuther, Gabi Grützner, Heinrich Kurz
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Abstract
One of the key elements for the successful integration of nanoimprint lithography into industrial production processes is the availability of high-performance resist materials. In this contribution we present a novel low-viscosity and fast curing UV-NIL polymer, which is applied by spin-coating and designed for wafer-scale imprinting. Systematic investigations of photocurable components and photoinitiators led to the formulation of the polymer system mr-UVCur06. Film thicknesses in the range of 50 - 500 nm with excellent quality and uniformity could be obtained by spin-coating. Its suitability for UV-NIL processes was evaluated by means of imprinting tests and plasma etching investigations. This included investigations on imprinting with hard moulds, UV curing doses, resolution, etch rates using various plasma gases and pattern transfer. The beneficial flow behaviour of mr-UVCur06 led to short UV-NIL cycle times. Patterns of several orders of magnitude with feature sizes in the range of 30 nm to several tens of micrometers could be imprinted simultaneously. An example of a pattern transfer into Si was shown, where mr-UVCur06 was used as an polymer etch mask.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marko Vogler, Markus Bender, Ulrich Plachetka, Andreas Fuchs, Sabine Wiedenberg, Freimut Reuther, Gabi Grützner, and Heinrich Kurz "Low-viscosity and fast-curing polymer system for UV-based nanoimprint lithography and its processing", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651727 (21 March 2007); https://doi.org/10.1117/12.708507
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Cited by 3 scholarly publications.
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KEYWORDS
Polymers

Ultraviolet radiation

Etching

Silicon

Oxygen

Plasma

Plasma etching

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