Evaluation of CD-SEM measurement uncertainty using secondary electron simulation with charging effect

Hideaki Abe; Akira Hamaguchi; Yuichiro Yamazaki

doi:10.1117/12.712191

5 April 2007 Evaluation of CD-SEM measurement uncertainty using secondary electron simulation with charging effect

Hideaki Abe, Akira Hamaguchi, Yuichiro Yamazaki

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 65180L (2007) https://doi.org/10.1117/12.712191
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

In recent year, CD metrology is required not only precision but also accuracy for more accurate CD control. CD bias between CD-SEM and a reference tool is the most important factor for more accurate CD measurement. CD bias varies by many CD-SEM and pattern condition. Then, CD bias variation caused by CD-SEM should be evaluated in detail. However, it is difficult to estimate these factors dependence on CD bias variation experimentally. Then, we develop an electron beam simulator with charging effects. We evaluated the mechanism of CD bias variation using electron beam simulator and CD-SEM data. As the results, CD bias variation is caused by changing of secondary electron signal which depends on space width. There are several different points between the experimental results and the simulation results in grayscale line profiles. Simulation data can be more similar to experimental data with charging effects and the actual experimental conditions. Simulation has enough capability to estimate CD bias variation with the simple structure and non-charging calculation. And mechanism of space width dependence on CD bias can be analyzed by using electron beam simulator.

Citation Download Citation

Hideaki Abe, Akira Hamaguchi, and Yuichiro Yamazaki "Evaluation of CD-SEM measurement uncertainty using secondary electron simulation with charging effect", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65180L (5 April 2007); https://doi.org/10.1117/12.712191

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available