Paper
12 April 2007 Developing the new ADC algorithm that enables to identify the defect source
Po-Yueh Tsai, Wen-Feng Chiu, To-Yu Chen, Fumiaki Endo, Yuko Kariya, Kazunori Nemoto
Author Affiliations +
Abstract
Since the semiconductor manufacturing process has become more and more complicated due to the introduction of either new materials or new structures, detecting the source of a defect has become dramatically difficult. Automatic Defect Classification (ADC) is one of the most effective ways for identifying the source of a defect. However, the current ADC algorithm is insufficient in identifying a defect source, because its classification results are quite simple. Since the classification is determined by the shape or size of the defect, it is difficult to figure out the process or processing tool in which the defects are generated. To solve this problem, we propose a new ADC algorithm and have already applied it to a high-volume System-on-Chip (SoC) production line to verify its efficiency. We confirmed with the classification results that the new ADC algorithm is almost as accurate as manually classifying them, but with the reduction of the time required for identifying the defect source.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Po-Yueh Tsai, Wen-Feng Chiu, To-Yu Chen, Fumiaki Endo, Yuko Kariya, and Kazunori Nemoto "Developing the new ADC algorithm that enables to identify the defect source", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65180P (12 April 2007); https://doi.org/10.1117/12.712069
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Cited by 3 scholarly publications.
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KEYWORDS
Particles

Algorithm development

Back end of line

Yield improvement

Image classification

Manufacturing

Chemical vapor deposition

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