Paper
5 April 2007 Metrology challenges for advanced lithography techniques
Ilan Englard, Peter Vanoppen, Jo Finders, Ingrid Minnaert-Janssen, Frank Duray, Jeroen Meessen, Gert-Jan Janssen, Ofer Adan, Liraz Gershtein, Ram Peltinov, Claudio Masia, Richard Piech
Author Affiliations +
Abstract
Traditionally CD SEM has been positioned as a local critical dimension measurement and analysis technique. Emerging lithography techniques introduce new challenges for CD SEM such as overlay error measurements. For the sub 45 nm technology nodes, several new lithography approaches are developed that rely on multiple lithography and deposition and etch process steps. Seamless integration of these lithography and deposition and etch process steps requires specific CD and/or overlay metrology capability for optimal CD and overlay registration performance. Areas of development are focused on CD measurement algorithms and correlation after resist develop and subsequent etch steps. These new lithography processes require unprecedented accuracy and overlay resolution. Fundamental and application specific metrology challenges and solutions will be highlighted. In addition, this paper will report on unique overlay target design in combination with innovative CD SEM measurement techniques to meet those challenges.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ilan Englard, Peter Vanoppen, Jo Finders, Ingrid Minnaert-Janssen, Frank Duray, Jeroen Meessen, Gert-Jan Janssen, Ofer Adan, Liraz Gershtein, Ram Peltinov, Claudio Masia, and Richard Piech "Metrology challenges for advanced lithography techniques", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65181G (5 April 2007); https://doi.org/10.1117/12.713455
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Cited by 4 scholarly publications.
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KEYWORDS
Overlay metrology

Critical dimension metrology

Etching

Lithography

Monte Carlo methods

Scanning electron microscopy

Metrology

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